N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220 MagnaChip MDP18N50BTH
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,70
Katrs (Tubina ir 5) (bez PVN)
€ 2,057
Katrs (Tubina ir 5) (Ieskaitot PVN)
5
€ 1,70
Katrs (Tubina ir 5) (bez PVN)
€ 2,057
Katrs (Tubina ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 5 - 20 | € 1,70 | € 8,50 |
| 25 - 45 | € 1,50 | € 7,50 |
| 50 - 145 | € 1,35 | € 6,75 |
| 150 - 345 | € 1,25 | € 6,25 |
| 350+ | € 1,15 | € 5,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
236 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.67mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Width
4.83mm
Transistor Material
Si
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products