N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH

RS noliktavas nr.: 871-4937Ražotājs: MagnaChipRažotāja kods: MDF7N65BTH
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

18.4 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,958

Katrs (Tubina ir 10) (bez PVN)

€ 1,159

Katrs (Tubina ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH
Izvēlēties iepakojuma veidu

€ 0,958

Katrs (Tubina ir 10) (bez PVN)

€ 1,159

Katrs (Tubina ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220F MagnaChip MDF7N65BTH
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
10 - 40€ 0,958€ 9,58
50 - 90€ 0,939€ 9,39
100 - 290€ 0,928€ 9,28
300 - 590€ 0,916€ 9,16
600+€ 0,903€ 9,03

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

18.4 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

16.13mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more