N-Channel MOSFET, 11 A, 660 V, 3-Pin TO-220F MagnaChip MDF11N60BTH
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Produkta apraksts
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (Tubina ir 10) (bez PVN)
€ 1,27
Katrs (Tubina ir 10) (Ieskaitot PVN)
10
€ 1,05
Katrs (Tubina ir 10) (bez PVN)
€ 1,27
Katrs (Tubina ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 10 - 40 | € 1,05 | € 10,50 |
| 50 - 90 | € 0,951 | € 9,51 |
| 100 - 240 | € 0,894 | € 8,94 |
| 250 - 490 | € 0,823 | € 8,23 |
| 500+ | € 0,758 | € 7,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
660 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
38.4 nC @ 10 V
Number of Elements per Chip
1
Height
16.13mm
Forward Diode Voltage
1.4V
Minimum Operating Temperature
-55 °C
Produkta apraksts
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products