Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
PRICED TO CLEAR
Yes
Height
2.39mm
Izcelsmes valsts
China
Produkta apraksts
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,113
Katrs (Tubina ir 50) (bez PVN)
€ 0,137
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 0,113
Katrs (Tubina ir 50) (bez PVN)
€ 0,137
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
PRICED TO CLEAR
Yes
Height
2.39mm
Izcelsmes valsts
China
Produkta apraksts
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.