N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip MDD5N40RH

RS noliktavas nr.: 871-6652Ražotājs: MagnaChipRažotāja kods: MDD5N40RH
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

400 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

PRICED TO CLEAR

Yes

Height

2.39mm

Izcelsmes valsts

China

Produkta apraksts

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,113

Katrs (Tubina ir 50) (bez PVN)

€ 0,137

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip MDD5N40RH

€ 0,113

Katrs (Tubina ir 50) (bez PVN)

€ 0,137

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 3.4 A, 400 V, 3-Pin DPAK MagnaChip MDD5N40RH
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

400 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

PRICED TO CLEAR

Yes

Height

2.39mm

Izcelsmes valsts

China

Produkta apraksts

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more