Littelfuse NGB8207BNT4G IGBT, 20 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
Tehniskie dokumenti
Specifikācija
Brand
LittelfuseMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
365 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
165 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.29 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,609
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,737
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
5
€ 0,609
Katrs (tiek piegadats Lente) (bez PVN)
€ 0,737
Katrs (tiek piegadats Lente) (Ieskaitot PVN)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
LittelfuseMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
365 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
165 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.29 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products