Tehniskie dokumenti
Specifikācija
Brand
LittelfuseMaximum Continuous Collector Current
18 A
Maximum Collector Emitter Voltage
430 V
Maximum Gate Emitter Voltage
18V
Maximum Power Dissipation
115 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.29 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,60
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,936
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
€ 1,60
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,936
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
Tehniskie dokumenti
Specifikācija
Brand
LittelfuseMaximum Continuous Collector Current
18 A
Maximum Collector Emitter Voltage
430 V
Maximum Gate Emitter Voltage
18V
Maximum Power Dissipation
115 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.29 x 9.65 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.