Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 142,00
Katrs (Kaste ir 2) (bez PVN)
€ 171,82
Katrs (Kaste ir 2) (Ieskaitot PVN)
2
€ 142,00
Katrs (Kaste ir 2) (bez PVN)
€ 171,82
Katrs (Kaste ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Kaste |
---|---|---|
2 - 8 | € 142,00 | € 284,00 |
10 - 18 | € 139,00 | € 278,00 |
20+ | € 135,00 | € 270,00 |
Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Produkta apraksts
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.