IXYS Linear L2 N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
178 A
Maximum Drain Source Voltage
100 V
Series
Linear L2
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
540 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
9.6mm
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 550,00
€ 55,00 Katrs (Tubina ir 10) (bez PVN)
€ 665,50
€ 66,55 Katrs (Tubina ir 10) (Ieskaitot PVN)
10
€ 550,00
€ 55,00 Katrs (Tubina ir 10) (bez PVN)
€ 665,50
€ 66,55 Katrs (Tubina ir 10) (Ieskaitot PVN)
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
178 A
Maximum Drain Source Voltage
100 V
Series
Linear L2
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
830 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
540 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
9.6mm
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products