Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
850 V
Series
HiperFET
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.79 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Length
20.29mm
Typical Gate Charge @ Vgs
340 @ 10 V nC
Maximum Operating Temperature
+150 °C
Height
26.59mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 41,90
Katrs (bez PVN)
€ 50,70
Katrs (Ieskaitot PVN)
1
€ 41,90
Katrs (bez PVN)
€ 50,70
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 41,90 |
5 - 9 | € 39,80 |
10+ | € 38,70 |
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
850 V
Series
HiperFET
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.79 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Length
20.29mm
Typical Gate Charge @ Vgs
340 @ 10 V nC
Maximum Operating Temperature
+150 °C
Height
26.59mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V