Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
650 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.56 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
20.26mm
Typical Gate Charge @ Vgs
355 nC @ 10 V nC
Height
26.59mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 38,50
Katrs (bez PVN)
€ 46,58
Katrs (Ieskaitot PVN)
1
€ 38,50
Katrs (bez PVN)
€ 46,58
Katrs (Ieskaitot PVN)
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 38,50 |
5 - 9 | € 30,80 |
10 - 24 | € 30,00 |
25+ | € 29,30 |
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
150 A
Maximum Drain Source Voltage
650 V
Package Type
PLUS264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
1.56 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.31mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
20.26mm
Typical Gate Charge @ Vgs
355 nC @ 10 V nC
Height
26.59mm
Series
HiperFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V