Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
88 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Package Type
SOT-227B
Mounting Type
Surface Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
38.23 x 25.25 x 9.6mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Izcelsmes valsts
United States
Produkta apraksts
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 31,00
Katrs (Tubina ir 10) (bez PVN)
€ 37,51
Katrs (Tubina ir 10) (Ieskaitot PVN)
10
€ 31,00
Katrs (Tubina ir 10) (bez PVN)
€ 37,51
Katrs (Tubina ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
IXYSMaximum Continuous Collector Current
88 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Package Type
SOT-227B
Mounting Type
Surface Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
38.23 x 25.25 x 9.6mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Izcelsmes valsts
United States
Produkta apraksts
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.