N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF

RS noliktavas nr.: 650-4097PRažotājs: International RectifierRažotāja kods: IRF7807ZPBF
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Series

HEXFET

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
€ 0,793Katrs (Paka ir 10) (bez PVN)
Noliktavas stāvoklis patreiz nav pieejams

P.O.A.

Katrs (tiek piegadats Tubina) (bez PVN)

N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Izvēlēties iepakojuma veidu

P.O.A.

Katrs (tiek piegadats Tubina) (bez PVN)

N-Channel MOSFET Transistor, 11 A, 30 V, 8-Pin SOIC International Rectifier IRF7807ZPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
€ 0,793Katrs (Paka ir 10) (bez PVN)

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Series

HEXFET

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Vishay N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Si4134DY-T1-GE3
€ 0,793Katrs (Paka ir 10) (bez PVN)