N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 Infineon SPW11N80C3FKSA1

RS noliktavas nr.: 911-4940Ražotājs: InfineonRažotāja kods: SPW11N80C3FKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247

Series

CoolMOS C3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.03mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Width

5.16mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

21.1mm

Izcelsmes valsts

Germany

Produkta apraksts

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,75

Katrs (Tubina ir 30) (bez PVN)

€ 3,328

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 Infineon SPW11N80C3FKSA1

€ 2,75

Katrs (Tubina ir 30) (bez PVN)

€ 3,328

Katrs (Tubina ir 30) (Ieskaitot PVN)

N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 Infineon SPW11N80C3FKSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
30 - 30€ 2,75€ 82,50
60 - 120€ 2,70€ 81,00
150 - 270€ 2,60€ 78,00
300+€ 2,50€ 75,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

800 V

Package Type

TO-247

Series

CoolMOS C3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.03mm

Typical Gate Charge @ Vgs

8 nC @ 10 V

Width

5.16mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

21.1mm

Izcelsmes valsts

Germany

Produkta apraksts

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more