Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20.7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
34.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Width
4.85mm
Number of Elements per Chip
1
Forward Diode Voltage
0
Typical Power Gain
0
Height
16.15mm
Series
SPA20N60C3
Minimum Operating Temperature
-55 °C
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,40
Katrs (Paka ir 2) (bez PVN)
€ 6,534
Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 5,40
Katrs (Paka ir 2) (bez PVN)
€ 6,534
Katrs (Paka ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 5,40 | € 10,80 |
10 - 18 | € 5,20 | € 10,40 |
20 - 48 | € 4,65 | € 9,30 |
50 - 98 | € 4,20 | € 8,40 |
100+ | € 3,95 | € 7,90 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20.7 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
34.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
30 V
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
87 nC @ 10 V
Width
4.85mm
Number of Elements per Chip
1
Forward Diode Voltage
0
Typical Power Gain
0
Height
16.15mm
Series
SPA20N60C3
Minimum Operating Temperature
-55 °C