N-Channel MOSFET, 10 A, 100 V, 3-Pin D2PAK Infineon IRL520NSPBF

RS noliktavas nr.: 178-1463Ražotājs: InfineonRažotāja kods: IRL520NSPBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Height

4.83mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,894

Katrs (Tubina ir 50) (bez PVN)

€ 1,082

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 100 V, 3-Pin D2PAK Infineon IRL520NSPBF

€ 0,894

Katrs (Tubina ir 50) (bez PVN)

€ 1,082

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 100 V, 3-Pin D2PAK Infineon IRL520NSPBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

9.65mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

20 nC @ 5 V

Height

4.83mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more