N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF

RS noliktavas nr.: 170-2241Ražotājs: InfineonRažotāja kods: IRL3103PBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

30 V

Series

IRL3103PbF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

16 V

Width

4.69mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.54mm

Typical Gate Charge @ Vgs

33 nC @ 4.5 V

Height

15.24mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,928

Katrs (Tubina ir 50) (bez PVN)

€ 1,123

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF

€ 0,928

Katrs (Tubina ir 50) (bez PVN)

€ 1,123

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 64 A, 30 V, 3 + Tab-Pin TO-220AB Infineon IRL3103PBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 200€ 0,928€ 46,40
250 - 450€ 0,699€ 34,95
500+€ 0,611€ 30,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

30 V

Series

IRL3103PbF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

16 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

16 V

Width

4.69mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.54mm

Typical Gate Charge @ Vgs

33 nC @ 4.5 V

Height

15.24mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more