Infineon IRGB14C40LPBF IGBT, 20 A 430 V, 3-Pin TO-220AB, Through Hole
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
430 V
Maximum Power Dissipation
125 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1kHz
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 15.24mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Automotive Ignition IGBT, Infineon
The IGBT is optimised for driving the coil in the harsh environment of automotive ignition systems. Active voltage clamps on the IGBT Gate-Emitter and Gate-Collector are included in the semiconductor package.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (Paka ir 5) (bez PVN)
€ 1,27
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,05
Katrs (Paka ir 5) (bez PVN)
€ 1,27
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
430 V
Maximum Power Dissipation
125 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1kHz
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 15.24mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Produkta apraksts
Automotive Ignition IGBT, Infineon
The IGBT is optimised for driving the coil in the harsh environment of automotive ignition systems. Active voltage clamps on the IGBT Gate-Emitter and Gate-Collector are included in the semiconductor package.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products