Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
205 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.39mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Izcelsmes valsts
Mexico
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,886
Katrs (Tubina ir 75) (bez PVN)
€ 1,072
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
€ 0,886
Katrs (Tubina ir 75) (bez PVN)
€ 1,072
Katrs (Tubina ir 75) (Ieskaitot PVN)
75
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
75 - 75 | € 0,886 | € 66,45 |
150 - 300 | € 0,841 | € 63,08 |
375+ | € 0,757 | € 56,78 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
205 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.39mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.73mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
6.22mm
Izcelsmes valsts
Mexico