Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Series
IRFR5305PBF
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
7.49mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,551
Katrs (Rulli ir 3000) (bez PVN)
€ 0,667
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,551
Katrs (Rulli ir 3000) (bez PVN)
€ 0,667
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Series
IRFR5305PBF
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
7.49mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V