P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

RS noliktavas nr.: 170-2262Ražotājs: InfineonRažotāja kods: IRFR5305TRLPBF
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

IRFR5305PBF

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7.49mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,551

Katrs (Rulli ir 3000) (bez PVN)

€ 0,667

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

€ 0,551

Katrs (Rulli ir 3000) (bez PVN)

€ 0,667

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

IRFR5305PBF

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7.49mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more