Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.3mm
Number of Elements per Chip
1
Transistor Material
Si
Height
20.3mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Mexico
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,25
Katrs (Tubina ir 50) (bez PVN)
€ 3,932
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 3,25
Katrs (Tubina ir 50) (bez PVN)
€ 3,932
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 3,25 | € 162,50 |
100 - 200 | € 3,10 | € 155,00 |
250+ | € 2,80 | € 140,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
15.9mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
5.3mm
Number of Elements per Chip
1
Transistor Material
Si
Height
20.3mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Mexico