N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-247AC Infineon IRFP4710PBF

RS noliktavas nr.: 178-1489Ražotājs: InfineonRažotāja kods: IRFP4710PBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

15.9mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.3mm

Number of Elements per Chip

1

Transistor Material

Si

Height

20.3mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Mexico

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,25

Katrs (Tubina ir 50) (bez PVN)

€ 3,932

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-247AC Infineon IRFP4710PBF

€ 3,25

Katrs (Tubina ir 50) (bez PVN)

€ 3,932

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 72 A, 100 V, 3-Pin TO-247AC Infineon IRFP4710PBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 3,25€ 162,50
100 - 200€ 3,10€ 155,00
250+€ 2,80€ 140,00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

15.9mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.3mm

Number of Elements per Chip

1

Transistor Material

Si

Height

20.3mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Mexico

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more