N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

RS noliktavas nr.: 178-1455Ražotājs: InfineonRažotāja kods: IRFI530NPBF
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

9.8mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,50

Katrs (Tubina ir 50) (bez PVN)

€ 1,815

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

€ 1,50

Katrs (Tubina ir 50) (bez PVN)

€ 1,815

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,50€ 75,00
100 - 200€ 1,45€ 72,50
250+€ 1,30€ 65,00

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.75mm

Typical Gate Charge @ Vgs

44 nC @ 10 V

Height

9.8mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more