Infineon HEXFET N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220AB IRFB3607PBF
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
56 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3,88
€ 0,777 Katrs (Paka ir 5) (bez PVN)
€ 4,70
€ 0,94 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 3,88
€ 0,777 Katrs (Paka ir 5) (bez PVN)
€ 4,70
€ 0,94 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 45 | € 0,777 | € 3,88 |
| 50 - 120 | € 0,521 | € 2,60 |
| 125 - 245 | € 0,481 | € 2,40 |
| 250 - 495 | € 0,451 | € 2,26 |
| 500+ | € 0,421 | € 2,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
56 nC @ 10 V
Width
4.82mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products