Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Width
3.99mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm
€ 23,35
€ 0,467 Katrs (tiek piegadats Tubina) (bez PVN)
€ 28,25
€ 0,565 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
50
€ 23,35
€ 0,467 Katrs (tiek piegadats Tubina) (bez PVN)
€ 28,25
€ 0,565 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 90 | € 0,467 | € 4,67 |
100 - 190 | € 0,419 | € 4,19 |
200 - 490 | € 0,369 | € 3,69 |
500+ | € 0,332 | € 3,32 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
31 nC @ 4.5 V, 61 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Width
3.99mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm