Infineon DirectFET N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC IRF7946TRPBF

RS noliktavas nr.: 130-0965PRažotājs: InfineonRažotāja kods: IRF7946TRPBF
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

198 A

Maximum Drain Source Voltage

40 V

Series

DirectFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

96 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

141 nC @ 20 V

Maximum Operating Temperature

+150 °C

Height

0.53mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 43,00

€ 2,15 Katrs (tiek piegadats Rulli) (bez PVN)

€ 52,03

€ 2,602 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon DirectFET N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC IRF7946TRPBF
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 2.

Ražošana -

Pieejams komplektos pa 2.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

20

Pieejams komplektos pa 2
20€ 43,00
22€ 47,30
24€ 51,60
26€ 55,90
28€ 60,20
30€ 64,50
32€ 68,80
34€ 73,10
36€ 77,40
38€ 81,70
40€ 86,00
42€ 90,30
44€ 94,60
46€ 98,90
48€ 103,20

€ 43,00

€ 2,15 Katrs (tiek piegadats Rulli) (bez PVN)

€ 52,03

€ 2,602 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon DirectFET N-Channel MOSFET, 198 A, 40 V DirectFET ISOMETRIC IRF7946TRPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 2.

Ražošana -

Pieejams komplektos pa 2.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

20

Pieejams komplektos pa 2
20€ 43,00
22€ 47,30
24€ 51,60
26€ 55,90
28€ 60,20
30€ 64,50
32€ 68,80
34€ 73,10
36€ 77,40
38€ 81,70
40€ 86,00
42€ 90,30
44€ 94,60
46€ 98,90
48€ 103,20

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
20 - 48€ 2,15€ 4,30
50 - 98€ 2,05€ 4,10
100 - 198€ 1,90€ 3,80
200+€ 1,75€ 3,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

198 A

Maximum Drain Source Voltage

40 V

Series

DirectFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

96 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

141 nC @ 20 V

Maximum Operating Temperature

+150 °C

Height

0.53mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Produkta apraksts

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more