Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Height
1.5mm
Series
IRF7470PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,582
Katrs (Rulli ir 4000) (bez PVN)
€ 0,704
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 0,582
Katrs (Rulli ir 4000) (bez PVN)
€ 0,704
Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
4000 - 4000 | € 0,582 | € 2 328,00 |
8000+ | € 0,549 | € 2 196,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Height
1.5mm
Series
IRF7470PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V