Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,928
Katrs (Paka ir 10) (bez PVN)
€ 1,123
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,928
Katrs (Paka ir 10) (bez PVN)
€ 1,123
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 0,928 | € 9,28 |
50 - 90 | € 0,724 | € 7,24 |
100 - 240 | € 0,678 | € 6,78 |
250 - 490 | € 0,63 | € 6,30 |
500+ | € 0,585 | € 5,85 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Width
4mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Series
IRF7343PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V