Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,60
Katrs (Paka ir 10) (bez PVN)
€ 1,936
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 1,60
Katrs (Paka ir 10) (bez PVN)
€ 1,936
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 1,60 | € 16,00 |
50 - 90 | € 1,35 | € 13,50 |
100 - 240 | € 1,25 | € 12,50 |
250 - 490 | € 1,20 | € 12,00 |
500+ | € 1,10 | € 11,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Series
IRF3710ZS
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
9.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V