N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

RS noliktavas nr.: 170-2318Ražotājs: InfineonRažotāja kods: IPT012N08N5ATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Width

10.58mm

Number of Elements per Chip

1

Height

2.4mm

Series

IPT012N08N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 4,65

Katrs (Rulli ir 2000) (bez PVN)

€ 5,626

Katrs (Rulli ir 2000) (Ieskaitot PVN)

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1

€ 4,65

Katrs (Rulli ir 2000) (bez PVN)

€ 5,626

Katrs (Rulli ir 2000) (Ieskaitot PVN)

N-Channel MOSFET, 300 A, 80 V, 8 + Tab-Pin HSOF Infineon IPT012N08N5ATMA1
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

80 V

Package Type

HSOF

Mounting Type

Surface Mount

Pin Count

8 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

10.1mm

Typical Gate Charge @ Vgs

178 nC @ 10 V

Width

10.58mm

Number of Elements per Chip

1

Height

2.4mm

Series

IPT012N08N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more