Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 9.58
€ 0.958 Each (In a Pack of 10) (Exc. Vat)
€ 11.59
€ 1.159 Each (In a Pack of 10) (inc. VAT)
Standard
10
€ 9.58
€ 0.958 Each (In a Pack of 10) (Exc. Vat)
€ 11.59
€ 1.159 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 0.958 | € 9.58 |
| 50 - 90 | € 0.91 | € 9.10 |
| 100 - 240 | € 0.871 | € 8.71 |
| 250 - 490 | € 0.833 | € 8.33 |
| 500+ | € 0.775 | € 7.75 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.1 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
98 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
24.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.85V
Product details
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


