Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 16 A, 650 V, 3-Pin SOT-223 IPN60R600P7SATMA1

RS noliktavas nr.: 220-7436Ražotājs: InfineonRažotāja kods: IPN60R600P7SATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P7

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.6 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

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€ 753,00

€ 0,251 Katrs (Rulli ir 3000) (bez PVN)

€ 911,13

€ 0,304 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 16 A, 650 V, 3-Pin SOT-223 IPN60R600P7SATMA1

€ 753,00

€ 0,251 Katrs (Rulli ir 3000) (bez PVN)

€ 911,13

€ 0,304 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Infineon CoolMOS™ P7 N-Channel MOSFET Transistor & Diode, 16 A, 650 V, 3-Pin SOT-223 IPN60R600P7SATMA1

Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P7

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.6 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more