Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin TDSON Infineon IPG20N06S4L26ATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maximum Operating Temperature
+175 °C
Length
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.75mm
Series
OptiMOS
Produkta apraksts
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,896
Katrs (Paka ir 20) (bez PVN)
€ 1,084
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,896
Katrs (Paka ir 20) (bez PVN)
€ 1,084
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 20 - 180 | € 0,896 | € 17,92 |
| 200+ | € 0,684 | € 13,68 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maximum Operating Temperature
+175 °C
Length
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.75mm
Series
OptiMOS
Produkta apraksts
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products