Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1

RS noliktavas nr.: 214-9062Ražotājs: InfineonRažotāja kods: IPG20N06S4L11AATMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,27

€ 0,627 Katrs (Paka ir 10) (bez PVN)

€ 7,59

€ 0,759 Katrs (Paka ir 10) (Ieskaitot PVN)

Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
Izvēlēties iepakojuma veidu

€ 6,27

€ 0,627 Katrs (Paka ir 10) (bez PVN)

€ 7,59

€ 0,759 Katrs (Paka ir 10) (Ieskaitot PVN)

Infineon Dual N-Channel MOSFET, 20 A, 60 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N06S4L11AATMA1
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Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0112 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more