Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1

RS Stock No.: 223-8520Brand: InfineonManufacturers Part No.: IPG20N06S2L65AATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

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€ 13.88

€ 0.925 Each (In a Pack of 15) (Exc. Vat)

€ 16.79

€ 1.119 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1
Select packaging type

€ 13.88

€ 0.925 Each (In a Pack of 15) (Exc. Vat)

€ 16.79

€ 1.119 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON IPG20N06S2L65AATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
15 - 135€ 0.925€ 13.88
150 - 360€ 0.877€ 13.16
375 - 735€ 0.842€ 12.63
750 - 1485€ 0.806€ 12.09
1500+€ 0.75€ 11.25

Ideate. Create. Collaborate

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design-spark
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

55 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more