Infineon CoolMOS™ Silicon N-Channel MOSFET, 9 A, 650 V, 3-Pin DPAK IPD60R280CFD7ATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 1 447,50
€ 0,579 Katrs (Rulli ir 2500) (bez PVN)
€ 1 751,48
€ 0,701 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 1 447,50
€ 0,579 Katrs (Rulli ir 2500) (bez PVN)
€ 1 751,48
€ 0,701 Katrs (Rulli ir 2500) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
2500
Noliktavas stāvoklis patreiz nav pieejams
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.28 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products