Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2

RS noliktavas nr.: 222-4666PRažotājs: InfineonRažotāja kods: IPD50N06S4L08ATMA2
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0078 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 16,50

€ 1,10 Katrs (tiek piegadats Rulli) (bez PVN)

€ 19,96

€ 1,331 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2
Izvēlēties iepakojuma veidu

€ 16,50

€ 1,10 Katrs (tiek piegadats Rulli) (bez PVN)

€ 19,96

€ 1,331 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Rullis
15 - 60€ 1,10€ 16,50
75 - 135€ 1,05€ 15,75
150 - 360€ 0,985€ 14,78
375 - 735€ 0,943€ 14,14
750+€ 0,877€ 13,16

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0078 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more