Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Height
2.41mm
Series
IPD25CN10N G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,589
Katrs (Rulli ir 2500) (bez PVN)
€ 0,713
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,589
Katrs (Rulli ir 2500) (bez PVN)
€ 0,713
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.47mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Height
2.41mm
Series
IPD25CN10N G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V