N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1

RS noliktavas nr.: 171-1945Ražotājs: InfineonRažotāja kods: IPD200N15N3GATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.57mm

Series

IPD200N15N3 G

Minimum Operating Temperature

-55 °C

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 2,35

Katrs (Paka ir 10) (bez PVN)

€ 2,844

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Izvēlēties iepakojuma veidu

€ 2,35

Katrs (Paka ir 10) (bez PVN)

€ 2,844

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 10€ 2,35€ 23,50
20 - 40€ 1,90€ 19,00
50 - 90€ 1,75€ 17,50
100 - 240€ 1,65€ 16,50
250+€ 1,55€ 15,50

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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

9.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

4.57mm

Series

IPD200N15N3 G

Minimum Operating Temperature

-55 °C