N-Channel MOSFET, 90 A, 100 V, 3-Pin DPAK Infineon IPD068N10N3GATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-252
Series
IPD068N10N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Number of Elements per Chip
1
Width
7.47mm
Forward Diode Voltage
1.2V
Height
2.41mm
Minimum Operating Temperature
-55 °C
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,00
Katrs (Paka ir 10) (bez PVN)
€ 1,21
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 1,00
Katrs (Paka ir 10) (bez PVN)
€ 1,21
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-252
Series
IPD068N10N3 G
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Number of Elements per Chip
1
Width
7.47mm
Forward Diode Voltage
1.2V
Height
2.41mm
Minimum Operating Temperature
-55 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products