N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1

RS noliktavas nr.: 171-1955Ražotājs: InfineonRažotāja kods: IPB020N10N5ATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

168 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+175 °C

Series

IPB020N10N5

Minimum Operating Temperature

-55 °C

Height

4.57mm

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

€ 6,90

Katrs (Paka ir 5) (bez PVN)

€ 8,349

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Izvēlēties iepakojuma veidu

€ 6,90

Katrs (Paka ir 5) (bez PVN)

€ 8,349

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 6,90€ 34,50
25 - 95€ 5,80€ 29,00
100 - 245€ 5,10€ 25,50
250 - 495€ 4,80€ 24,00
500+€ 4,30€ 21,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

168 nC @ 10 V

Length

10.31mm

Maximum Operating Temperature

+175 °C

Series

IPB020N10N5

Minimum Operating Temperature

-55 °C

Height

4.57mm

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more