N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB014N06NATMA1

RS Stock No.: 906-2921Brand: InfineonManufacturers Part No.: IPB014N06NATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

11.05mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Height

4.57mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 18.60

€ 4.65 Each (In a Pack of 4) (Exc. Vat)

€ 22.51

€ 5.626 Each (In a Pack of 4) (inc. VAT)

N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB014N06NATMA1
Select packaging type

€ 18.60

€ 4.65 Each (In a Pack of 4) (Exc. Vat)

€ 22.51

€ 5.626 Each (In a Pack of 4) (inc. VAT)

N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 Infineon IPB014N06NATMA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
4 - 4€ 4.65€ 18.60
8 - 36€ 4.05€ 16.20
40 - 76€ 3.70€ 14.80
80 - 196€ 3.45€ 13.80
200+€ 3.20€ 12.80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

2.1 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

11.05mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Height

4.57mm

Series

OptiMOS 5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more