N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R299CPXKSA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.85mm
Number of Elements per Chip
1
Transistor Material
Si
Height
16.15mm
Series
CoolMOS CP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 67.00
€ 3.35 Each (Supplied in a Tube) (Exc. Vat)
€ 81.07
€ 4.054 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
20
€ 67.00
€ 3.35 Each (Supplied in a Tube) (Exc. Vat)
€ 81.07
€ 4.054 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 20 - 36 | € 3.35 | € 13.40 |
| 40 - 96 | € 3.00 | € 12.00 |
| 100 - 196 | € 2.70 | € 10.80 |
| 200+ | € 2.60 | € 10.40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
33 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
4.85mm
Number of Elements per Chip
1
Transistor Material
Si
Height
16.15mm
Series
CoolMOS CP
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products