N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

RS noliktavas nr.: 911-4984Ražotājs: InfineonRažotāja kods: IPA60R190C6XKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

20.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.36mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

9.45mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,35

Katrs (Tubina ir 50) (bez PVN)

€ 4,054

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

€ 3,35

Katrs (Tubina ir 50) (bez PVN)

€ 4,054

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
50 - 200€ 3,35€ 167,50
250 - 450€ 3,05€ 152,50
500+€ 2,95€ 147,50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

20.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.36mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

9.45mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more