N-Channel MOSFET, 24.8 A, 500 V, 3 + Tab-Pin TO-220FP Infineon IPA50R190CEXKSA2

RS noliktavas nr.: 133-9893Ražotājs: InfineonRažotāja kods: IPA50R190CEXKSA2
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24.8 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

47.2 nC @ 10 V

Height

16.15mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.85V

Izcelsmes valsts

Malaysia

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,05

Katrs (Paka ir 5) (bez PVN)

€ 2,48

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 24.8 A, 500 V, 3 + Tab-Pin TO-220FP Infineon IPA50R190CEXKSA2
Izvēlēties iepakojuma veidu

€ 2,05

Katrs (Paka ir 5) (bez PVN)

€ 2,48

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 24.8 A, 500 V, 3 + Tab-Pin TO-220FP Infineon IPA50R190CEXKSA2
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 2,05€ 10,25
25 - 120€ 1,60€ 8,00
125 - 245€ 1,30€ 6,50
250+€ 1,20€ 6,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24.8 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

47.2 nC @ 10 V

Height

16.15mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.85V

Izcelsmes valsts

Malaysia

Produkta apraksts

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more