Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Number of Elements per Chip
1
Height
16.15mm
Forward Diode Voltage
0.85V
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,15
Katrs (Tubina ir 500) (bez PVN)
€ 1,392
Katrs (Tubina ir 500) (Ieskaitot PVN)
500
€ 1,15
Katrs (Tubina ir 500) (bez PVN)
€ 1,392
Katrs (Tubina ir 500) (Ieskaitot PVN)
500
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
500 - 2000 | € 1,15 | € 575,00 |
2500 - 4500 | € 0,977 | € 488,50 |
5000+ | € 0,952 | € 476,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24.8 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3 + Tab
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
32 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
47.2 nC @ 10 V
Number of Elements per Chip
1
Height
16.15mm
Forward Diode Voltage
0.85V
Series
CoolMOS CE
Minimum Operating Temperature
-40 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.