Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Package Type
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Izcelsmes valsts
Malaysia
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€ 2 280,00
€ 76,00 Katrs (Tubina ir 30) (bez PVN)
€ 2 758,80
€ 91,96 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 2 280,00
€ 76,00 Katrs (Tubina ir 30) (bez PVN)
€ 2 758,80
€ 91,96 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Package Type
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Izcelsmes valsts
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products