Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1

RS Stock No.: 284-714Brand: InfineonManufacturers Part No.: IMT65R022M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

€ 22.30

€ 22.30 Each (Exc. Vat)

€ 26.98

€ 26.98 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 22.30
2€ 44.60
3€ 66.90
4€ 89.20
5€ 111.50
6€ 133.80
7€ 156.10
8€ 178.40
9€ 200.70
10€ 201.00
11€ 221.10
12€ 241.20
13€ 261.30
14€ 281.40
15€ 301.50

€ 22.30

€ 22.30 Each (Exc. Vat)

€ 26.98

€ 26.98 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 79 A, 650 V, 8-Pin PG-HSOF-8 IMT65R022M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1€ 22.30
2€ 44.60
3€ 66.90
4€ 89.20
5€ 111.50
6€ 133.80
7€ 156.10
8€ 178.40
9€ 200.70
10€ 201.00
11€ 221.10
12€ 241.20
13€ 261.30
14€ 281.40
15€ 301.50

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9€ 22.30
10 - 99€ 20.10
100+€ 18.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

79 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more