Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole

RS noliktavas nr.: 162-3291Ražotājs: InfineonRažotāja kods: IKZ75N65EH5XKSA1
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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

16.3 x 5.21 x 21.1mm

Maximum Operating Temperature

+175 °C

Energy Rating

1.11mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4300pF

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 8,10

Katrs (Tubina ir 30) (bez PVN)

€ 9,801

Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole

€ 8,10

Katrs (Tubina ir 30) (bez PVN)

€ 9,801

Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon IKZ75N65EH5XKSA1, P-Channel IGBT, 90 A 650 V, 4-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
30 - 30€ 8,10€ 243,00
60 - 120€ 7,80€ 234,00
150+€ 7,60€ 228,00

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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

90 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

100kHz

Transistor Configuration

Single

Dimensions

16.3 x 5.21 x 21.1mm

Maximum Operating Temperature

+175 °C

Energy Rating

1.11mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4300pF