Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

RS noliktavas nr.: 145-9416Ražotājs: InfineonRažotāja kods: IKW30N60H3FKSA1
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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.72mJ

Izcelsmes valsts

Malaysia

Produkta apraksts

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Noliktavas stāvoklis patreiz nav pieejams

€ 2,85

Katrs (Tubina ir 30) (bez PVN)

€ 3,448

Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

€ 2,85

Katrs (Tubina ir 30) (bez PVN)

€ 3,448

Katrs (Tubina ir 30) (Ieskaitot PVN)

Infineon IKW30N60H3FKSA1 IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
30 - 30€ 2,85€ 85,50
60+€ 2,65€ 79,50

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Tehniskie dokumenti

Specifikācija

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

187 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

1630pF

Maximum Operating Temperature

+175 °C

Energy Rating

1.72mJ

Izcelsmes valsts

Malaysia

Produkta apraksts

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.