Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
7
Package Type
EASY2B
Channel Type
N
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Noliktavas stāvoklis patreiz nav pieejams
€ 59,00
Each (In a Tray of 18) (bez PVN)
€ 71,39
Each (In a Tray of 18) (Ieskaitot PVN)
Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B
18
€ 59,00
Each (In a Tray of 18) (bez PVN)
€ 71,39
Each (In a Tray of 18) (Ieskaitot PVN)
Infineon FP25R12W2T4PBPSA1 IGBT Module, 25 A 1200 V EASY2B
Noliktavas stāvoklis patreiz nav pieejams
18
Pirkt iepakojumos
Daudzums | Vienības cena | Per Paplāte |
---|---|---|
18 - 18 | € 59,00 | € 1 062,00 |
36+ | € 56,00 | € 1 008,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
25 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
7
Package Type
EASY2B
Channel Type
N