Tehniskie dokumenti
Specifikācija
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
5.5 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Produkta apraksts
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 8,70
€ 8,70 Katrs (bez PVN)
€ 10,53
€ 10,53 Katrs (Ieskaitot PVN)
Standarts
1
€ 8,70
€ 8,70 Katrs (bez PVN)
€ 10,53
€ 10,53 Katrs (Ieskaitot PVN)
Standarts
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
1 - 9 | € 8,70 |
10 - 49 | € 6,60 |
50 - 99 | € 6,40 |
100 - 499 | € 6,20 |
500+ | € 6,10 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonMemory Size
256kbit
Organisation
32K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
5.5 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Produkta apraksts
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.